Specification	DMT6007LFG-13

Current - Continuous Drain (Id) @ 25°C	80 A, 15 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	41.3 nC
Input Capacitance (Ciss) (Max) @ Vds	2090 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2.2 W, 62.5 W
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	POWERDI3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

DMT6007LFG Series

60V N-Channel Enhancement Mode MOSFET

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs
Diodes Inc DMT6007LFG-13	POWERDI3333-8	2090 pF	20 V	15 A 80 A	60 V	Surface Mount	2.2 W 62.5 W	41.3 nC	4.5 V 10 V	-55 °C	150 °C	8-PowerVDFN	N-Channel	2 V	MOSFET (Metal Oxide)	6 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	3000	$ 0.42
		6000	$ 0.39
		9000	$ 0.39

Description

General part information

DMT6007LFG Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.