Specification	NDF04N62ZG

Current - Continuous Drain (Id) @ 25°C	4.4 A
Drain to Source Voltage (Vdss)	620 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	535 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	28 W
Rds On (Max) @ Id, Vgs	2 Ohm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

NDF04N62Z Series

Power MOSFET 620V 4.1A 2 Ohm Single N-Channel TO220FP

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max) [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
ON Semiconductor NDF04N62ZG	4.5 V	620 V	Through Hole	10 V	TO-220-3 Full Pack	4.4 A	2 Ohm	N-Channel	28 W	30 V	19 nC	MOSFET (Metal Oxide)	535 pF	-55 °C	150 °C	TO-220FP

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 620V 2 Ohm Single N-Channel

Technical documentation and resources