Discrete Semiconductor Products

APT18M80S

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MOSFET N-CH 800V 19A D3PAK

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Discrete Semiconductor Products

Active

MOSFET N-CH 800V 19A D3PAK

Technical Specifications

Parameters and characteristics for this part

Specification	APT18M80S

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds	3760 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268-3, TO-268AA
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	530 mOhm
Supplier Device Package	D3PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
Microsemi Corporation APT18M80S	150 °C	-55 °C	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	30 V	N-Channel	3760 pF	D3PAK	5 V	19 A	MOSFET (Metal Oxide)	120 nC	Surface Mount	500 W	10 V	530 mOhm	800 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 800 V 19A (Tc) 500W (Tc) Surface Mount D3PAK

Technical documentation and resources