Discrete Semiconductor Products

SI3499DV-T1-GE3

LTB

MOSFET P-CH 8V 5.3A 6TSOP

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Discrete Semiconductor Products

LTB

MOSFET P-CH 8V 5.3A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI3499DV-T1-GE3

Current - Continuous Drain (Id) @ 25°C	5.3 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	1.1 W
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max) @ Id	750 mV

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SI3499DV-T1-GE3	1.5 V 4.5 V	6-TSOP	-55 °C	150 °C	5.3 A	Surface Mount	SOT-23-6 Thin TSOT-23-6	42 nC	8 V	750 mV	MOSFET (Metal Oxide)	5 V	23 mOhm	P-Channel	1.1 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 8 V 5.3A (Ta) 1.1W (Ta) Surface Mount 6-TSOP

Technical documentation and resources