Discrete Semiconductor Products

FGA20S120M

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IGBT, 40A, 1200V, N-CHANNEL

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Discrete Semiconductor Products

Active

IGBT, 40A, 1200V, N-CHANNEL

Technical Specifications

Parameters and characteristics for this part

Specification	FGA20S120M

Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Pulsed (Icm)	60 A
Gate Charge	208 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Supplier Device Package	TO-3P
Vce(on) (Max) @ Vge, Ic	1.85 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Current - Collector Pulsed (Icm)	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Mounting Type	Gate Charge	Package / Case	Vce(on) (Max) @ Vge, Ic	IGBT Type	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor FGA20S120M	60 A	TO-3P	40 A	Through Hole	208 nC	SC-65-3 TO-3P-3	1.85 V	Trench Field Stop	-55 °C	175 ░C	1200 V
ON Semiconductor FGA20S120M	60 A	TO-3P	40 A	Through Hole	208 nC	SC-65-3 TO-3P-3	1.85 V	Trench Field Stop	-55 °C	175 ░C	1200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench Field Stop 1200 V 40 A 348 W Through Hole TO-3P

Technical documentation and resources