Discrete Semiconductor Products

SQJB00EP-T1_GE3

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MOSFET 2N-CH 60V 30A PPAK SO8

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Discrete Semiconductor Products

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MOSFET 2N-CH 60V 30A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJB00EP-T1_GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	35 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	48 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3.5 V

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Grade	Technology	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Rds On (Max) @ Id, Vgs	Qualification	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Vgs(th) (Max) @ Id	Configuration
Vishay General Semiconductor - Diodes Division SQJB00EP-T1_GE3	PowerPAK® SO-8 Dual	30 A	Automotive	MOSFET (Metal Oxide)	35 nC	PowerPAK® SO-8 Dual	13 mOhm	AEC-Q101	60 V	Surface Mount	-55 °C	175 ░C	48 W	3.5 V	2 N-Channel (Dual)

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General part information

Mosfet Array 60V 30A (Tc) 48W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources