SFGH25N120FTDS

Obsolete

SFGH25N120FTDS

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Discrete Semiconductor Products

Obsolete

SFGH25N120FTDS

Technical Specifications

Parameters and characteristics for this part

Specification	SFGH25N120FTDS

Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	75 A
Gate Charge	169 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	313 W
Reverse Recovery Time (trr)	535 ns
Supplier Device Package	TO-247-3
Switching Energy	1.16 mJ, 1.42 mJ
Td (on/off) @ 25°C	26 ns, 151 ns
Test Condition	15 V, 10 Ohm, 25 A, 600 V
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Vce(on) (Max) @ Vge, Ic	Test Condition	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max)	IGBT Type	Mounting Type	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Gate Charge	Power - Max [Max]	Package / Case	Switching Energy	Operating Temperature [Min]	Operating Temperature [Max]	Td (on/off) @ 25°C
ON Semiconductor SFGH25N120FTDS	2 V	10 Ohm 15 V 25 A 600 V	75 A	50 A	Trench Field Stop	Through Hole	535 ns	1200 V	TO-247-3	169 nC	313 W	TO-247-3	1.16 mJ 1.42 mJ	-55 °C	150 °C	26 ns 151 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Trench Field Stop 1200 V 50 A 313 W Through Hole TO-247-3

Technical documentation and resources

No documents available