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LITTELFUSE LJ6008D8TP
Discrete Semiconductor Products

FQD6N40CTM

Active
ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 4.5 A, 400 V, 0.83 OHM, 10 V, 2 V ROHS COMPLIANT: YES

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LITTELFUSE LJ6008D8TP
Discrete Semiconductor Products

FQD6N40CTM

Active
ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 4.5 A, 400 V, 0.83 OHM, 10 V, 2 V ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFQD6N40CTM
Current - Continuous Drain (Id) @ 25°C4.5 A
Drain to Source Voltage (Vdss)400 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [x]20 nC
Input Capacitance (Ciss) (Max) @ Vds625 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)2.5 W, 48 W
Rds On (Max) @ Id, Vgs1 Ohm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.90
10$ 1.21
100$ 0.82
500$ 0.65
1000$ 0.59
Digi-Reel® 1$ 1.90
10$ 1.21
100$ 0.82
500$ 0.65
1000$ 0.59
Tape & Reel (TR) 2500$ 0.53
5000$ 0.50
NewarkEach 1$ 1.79
10$ 1.33
100$ 1.05
500$ 0.92
1000$ 0.90
ON SemiconductorN/A 1$ 0.54

Description

General part information

FQD6N40C Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.