Discrete Semiconductor Products

MCT05N06-TP

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N-CHANNEL MOSFET,SOT-223

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Discrete Semiconductor Products

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N-CHANNEL MOSFET,SOT-223

Technical Specifications

Parameters and characteristics for this part

Specification	MCT05N06-TP

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC
Input Capacitance (Ciss) (Max) @ Vds	1018 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	2.5 W
Rds On (Max) @ Id, Vgs	44 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	FET Type	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Supplier Device Package
Micro Commercial Components MCT05N06-TP	N-Channel	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	2.5 V	1018 pF	-55 °C	150 °C	60 V	26 nC	TO-261-4 TO-261AA	5 A	20 V	44 mOhm	2.5 W	SOT-223

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General part information

N-Channel 60 V 5A (Ta) 2.5W Surface Mount SOT-223

Technical documentation and resources