Discrete Semiconductor Products

UGF2008G

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Taiwan Semiconductor Corporation

25NS, 20A, 600V, ULTRA FAST RECOVERY RECTIFIER

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Discrete Semiconductor Products

Active

Taiwan Semiconductor Corporation

25NS, 20A, 600V, ULTRA FAST RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	UGF2008G

Current - Average Rectified (Io) (per Diode)	20 A
Current - Reverse Leakage @ Vr	5 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Reverse Recovery Time (trr)	25 ns
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Technology	Diode Configuration	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Mounting Type	Package / Case
Taiwan Semiconductor Corporation UGF2008G	Standard	1 Pair Common Cathode	150 °C	-55 °C	600 V	ITO-220AB	20 A	1.7 V	200 mA 500 ns	5 µA	25 ns	Through Hole	TO-220-3 Full Pack Isolated Tab

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General part information

Diode Array 1 Pair Common Cathode 600 V 20A Through Hole TO-220-3 Full Pack, Isolated Tab

Technical documentation and resources