Discrete Semiconductor Products

RJH60T04DPQ-A1#T0

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Renesas Electronics Corporation

IGBT 600V 30A TO-247A BUILT-IN FRD

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Discrete Semiconductor Products

RJH60T04DPQ-A1#T0

Active

Renesas Electronics Corporation

IGBT 600V 30A TO-247A BUILT-IN FRD

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RJH60T04DPQ-A1#T0

Current - Collector (Ic) (Max) [Max]	60 A
Gate Charge	87 nC
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power - Max [Max]	208.3 W
Supplier Device Package	TO-247A
Td (on/off) @ 25°C	54 ns, 136 ns
Test Condition	30 A, 10 Ohm, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	1.95 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

60T0x Series Series

IGBT 600V 30A TO-247A Built-In FRD

Part	IGBT Type	Mounting Type	Supplier Device Package	Td (on/off) @ 25°C	Package / Case	Gate Charge	Test Condition	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Operating Temperature
Renesas Electronics Corporation RJH60T04DPQ-A1#T0	Trench	Through Hole	TO-247A	54 ns 136 ns	TO-247-3	87 nC	10 Ohm 15 V 30 A 400 V	600 V	208.3 W	60 A	1.95 V	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	567	$ 13.20
	Tube	1	$ 4.72
		25	$ 3.74
		100	$ 3.21
		500	$ 2.85
		1000	$ 2.44
		2000	$ 2.30
Mouser	N/A	1	$ 13.20
		10	$ 10.33
		25	$ 8.18
		100	$ 6.98
		500	$ 6.61

Description

General part information

60T0x Series Series

The RJH60T04DPQ-A1 600V, 30A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for current resonance circuit applications. It is available in a TO-247A package type.

Documents

Technical documentation and resources