Discrete Semiconductor Products

KSH44H11TM

Obsolete

NPN EPITAXIAL SILICON TRANSISTOR

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Discrete Semiconductor Products

Obsolete

NPN EPITAXIAL SILICON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	KSH44H11TM

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 hFE
Frequency - Transition	50 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.75 W
Supplier Device Package	DPAK
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

NPN Epitaxial Silicon Transistor

Part	Current - Collector Cutoff (Max) [Max]	Mounting Type	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Frequency - Transition	Power - Max [Max]
ON Semiconductor KSH44H11TM	10 µA	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	80 V	40 hFE	DPAK	8 A	NPN	1 V	150 °C	50 MHz	1.75 W
ON Semiconductor KSH44H11TF	10 µA	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	80 V	40 hFE	DPAK	8 A	NPN	1 V	150 °C	50 MHz	1.75 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Designed for general-purpose power and switching, such as output or driver stages in applications.