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TO-247-3 AD EP
Discrete Semiconductor Products

FCH125N60E

Obsolete
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>® </SUP>II, EASY DRIVE, 600 V, 29 A, 125 MΩ, TO-247

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TO-247-3 AD EP
Discrete Semiconductor Products

FCH125N60E

Obsolete
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>® </SUP>II, EASY DRIVE, 600 V, 29 A, 125 MΩ, TO-247

Technical Specifications

Parameters and characteristics for this part

SpecificationFCH125N60E
Current - Continuous Drain (Id) @ 25°C29 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs95 nC
Input Capacitance (Ciss) (Max) @ Vds2990 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)278 W
Rds On (Max) @ Id, Vgs125 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
NewarkEach 100$ 2.72
250$ 2.27
500$ 2.21

Description

General part information

FCH125N60E Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.