Specification	NTF2955T1G

Current - Continuous Drain (Id) @ 25°C	1.7 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	14.3 nC
Input Capacitance (Ciss) (Max) @ Vds	492 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	185 mOhm
Supplier Device Package	SOT-223 (TO-261)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

NTF2955 Series

Single P-Channel Power MOSFET -60V, -2.6A, 170mΩ

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)
ON Semiconductor NTF2955T1G	20 V	185 mOhm	1 W	P-Channel	-55 °C	175 ░C	14.3 nC	10 V	1.7 A	SOT-223 (TO-261)	MOSFET (Metal Oxide)	TO-261-4 TO-261AA	492 pF	Surface Mount	60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This is a -60 V, P-Channel MOSFET in SOT-223 package. It is an extremely rugged device and has a large safe operating area.