Discrete Semiconductor Products

EM518GP-TP

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DIODE GEN PURP 2KV 1A DO41

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Discrete Semiconductor Products

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DIODE GEN PURP 2KV 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	EM518GP-TP

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AL, DO-41, Axial
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-41
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	2000 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Capacitance @ Vr, F	Supplier Device Package	Package / Case	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Speed	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)
Micro Commercial Components EM518GP-TP	15 pF	DO-41	Axial DO-204AL DO-41	Through Hole	1.25 V	5 µA	2000 V	Standard Recovery >500ns	200 mA	Standard	150 °C	-65 C	1 A
Micro Commercial Components EM518-AP	15 pF	DO-41	Axial DO-204AL DO-41	Through Hole	1.2 V	5 µA	2000 V	Standard Recovery >500ns	200 mA	Standard	150 °C	-65 C	1 A
Micro Commercial Components EM518GP-AP	15 pF	DO-41	Axial DO-204AL DO-41	Through Hole	1.25 V	5 µA	2000 V	Standard Recovery >500ns	200 mA	Standard	150 °C	-65 C	1 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 2000 V 1A Through Hole DO-41

Technical documentation and resources