PSMN6R8-40HSX

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MOSFET 2N-CH 40V 40A LFPAK56D

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Discrete Semiconductor Products

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MOSFET 2N-CH 40V 40A LFPAK56D

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN6R8-40HSX

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	40 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	28.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1947 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power - Max [Max]	64 W
Rds On (Max) @ Id, Vgs [Max]	6.8 mOhm
Supplier Device Package	LFPAK56D
Technology	MOSFET (Metal Oxide)

Part	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Drain to Source Voltage (Vdss)	Package / Case	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Technology
Freescale Semiconductor - NXP PSMN6R8-40HSX	-55 °C	175 ░C	2 N-Channel (Dual)	40 V	8-LFPAK56 SOT-1205	64 W	1947 pF	28.9 nC	40 A	LFPAK56D	6.8 mOhm	Surface Mount	MOSFET (Metal Oxide)

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General part information

Mosfet Array 40V 40A (Ta) 64W (Ta) Surface Mount LFPAK56D

Technical documentation and resources