Specification	DMT30M9LPS-13

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	160.5 nC
Input Capacitance (Ciss) (Max) @ Vds	12121 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.6 W
Rds On (Max) @ Id, Vgs [Max]	1 mOhm
Supplier Device Package	PowerDI5060-8 (Type K)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

DMT8008LFG Series

30V N-Channel Enhancement Mode MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id
Diodes Inc DMT8008LFG-7	-55 °C	150 °C	2.5 V	6.9 mOhm	37.7 nC	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	80 V	N-Channel	16 A 48 A	8-PowerVDFN	20 V	1 W 23.5 W	2254 pF	POWERDI3333-8
Diodes Inc DMT8008LFG-13	-55 °C	150 °C	2.5 V	6.9 mOhm	37.7 nC	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	80 V	N-Channel	16 A 48 A	8-PowerVDFN	20 V	1 W 23.5 W	2254 pF	POWERDI3333-8
Diodes Inc DMT30M9LPS-13	-55 °C	150 °C			160.5 nC	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	30 V	N-Channel	100 A	8-PowerTDFN	20 V	2.6 W	12121 pF	PowerDI5060-8 (Type K)	1 mOhm	3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.63
		10	$ 2.19
		100	$ 1.74
		500	$ 1.47
		1000	$ 1.25
	Digi-Reel®	1	$ 2.63
		10	$ 2.19
		100	$ 1.74
		500	$ 1.47
		1000	$ 1.25
	Tape & Reel (TR)	2500	$ 1.14

Description

General part information

DMT8008LFG Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.