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ONSEMI MUN2134T1G
Discrete Semiconductor Products

MUN2130T1G

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ON Semiconductor

BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, BRT, SINGLE PNP, 50 V, 100 MA

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ONSEMI MUN2134T1G
Discrete Semiconductor Products

MUN2130T1G

Active
ON Semiconductor

BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, BRT, SINGLE PNP, 50 V, 100 MA

Technical Specifications

Parameters and characteristics for this part

SpecificationMUN2130T1G
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]3 hFE
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]230 mW
Resistor - Base (R1)1 kOhms
Resistor - Emitter Base (R2)1 kOhm
Resistors IncludedR1 and R2
Supplier Device PackageSC-59
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.04
6000$ 0.03
9000$ 0.03
15000$ 0.03
21000$ 0.03
30000$ 0.03
75000$ 0.02
150000$ 0.02
300000$ 0.02
NewarkEach (Supplied on Cut Tape) 2500$ 0.04
ON SemiconductorN/A 1$ 0.02

Description

General part information

MUN2130 Series

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.