Discrete Semiconductor Products
RGTV80TK65DGVC11
NRNDRohm Semiconductor
2ΜS SHORT-CIRCUIT TOLERANCE, 650V 23A, FRD BUILT-IN, TO-3PFM, FIELD STOP TRENCH IGBT
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Discrete Semiconductor Products
RGTV80TK65DGVC11
NRNDRohm Semiconductor
2ΜS SHORT-CIRCUIT TOLERANCE, 650V 23A, FRD BUILT-IN, TO-3PFM, FIELD STOP TRENCH IGBT
Technical Specifications
Parameters and characteristics for this part
| Specification | RGTV80TK65DGVC11 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 39 A |
| Gate Charge | 81 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-3PFM, SC-93-3 |
| Power - Max [Max] | 85 W |
| Reverse Recovery Time (trr) | 101 ns |
| Supplier Device Package | TO-3PFM |
| Switching Energy | 1.02 mJ, 710 µJ |
| Td (on/off) @ 25°C [Max] | 113 ns |
| Td (on/off) @ 25°C [Min] | 39 ns |
| Test Condition | 400 V, 10 Ohm, 15 V, 40 A |
| Vce(on) (Max) @ Vge, Ic [Max] | 1.9 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RGTV80TK65D Series
RGTV80TK65D is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.
Documents
Technical documentation and resources