Discrete Semiconductor Products

NVMFS5833NLT1G

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MOSFET N-CH 40V 16A 5DFN

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Discrete Semiconductor Products

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MOSFET N-CH 40V 16A 5DFN

Technical Specifications

Parameters and characteristics for this part

Specification	NVMFS5833NLT1G

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1714 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	3.7 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Qualification	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type
ON Semiconductor NVMFS5833NLT1G	3.5 V	7.5 mOhm	-55 °C	175 ░C	Automotive	AEC-Q101	20 V	3.7 W	40 V	5-DFN (5x6)	8-SOFL	MOSFET (Metal Oxide)	1714 pF	8-PowerTDFN 5 Leads	N-Channel	32.5 nC	10 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 16A (Ta) 3.7W (Ta) Surface Mount 5-DFN (5x6) (8-SOFL)

Technical documentation and resources

No documents available