Discrete Semiconductor Products

AOB470L

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MOSFET N-CH 75V 10A/100A TO263

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Discrete Semiconductor Products

Active

MOSFET N-CH 75V 10A/100A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	AOB470L

Current - Continuous Drain (Id) @ 25°C	10 A, 100 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	136 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5640 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	2.1 W, 268 W
Rds On (Max) @ Id, Vgs [Max]	10.2 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type
Alpha & Omega Semiconductor Inc. AOB470L	175 °C	-55 °C	25 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	136 nC	MOSFET (Metal Oxide)	4 V	2.1 W 268 W	10 A 100 A	N-Channel	10 V	TO-263 (D2PAK)	10.2 mOhm	75 V	5640 pF	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 75 V 10A (Ta), 100A (Tc) 2.1W (Ta), 268W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources