Discrete Semiconductor Products

GIB1403HE3_A/P

Obsolete

DIODE GEN PURP 150V 8A TO263AB

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 150V 8A TO263AB

Technical Specifications

Parameters and characteristics for this part

Specification	GIB1403HE3_A/P

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Qualification	AEC-Q101
Reverse Recovery Time (trr)	35 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-263AB (D2PAK)
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	975 mV

Part	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Reverse Recovery Time (trr)	Grade	Current - Reverse Leakage @ Vr	Package / Case	Qualification	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Speed	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division GIB1403HE3_A/P	Standard	975 mV	Surface Mount	35 ns	Automotive	5 µA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	AEC-Q101	150 °C	-65 C	TO-263AB (D2PAK)	200 mA 500 ns	8 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.67

General part information

Diode 150 V 8A Surface Mount TO-263AB (D2PAK)

Technical documentation and resources