Discrete Semiconductor Products

RN1107,LF(CT

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TRANS DIGITAL BJT NPN 50V 0.1A 100MW 3-PIN SSM T/R

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Discrete Semiconductor Products

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TRANS DIGITAL BJT NPN 50V 0.1A 100MW 3-PIN SSM T/R

Technical Specifications

Parameters and characteristics for this part

Specification	RN1107,LF(CT

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-416, SC-75
Power - Max [Max]	100 mW
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	47 kOhms
Supplier Device Package	SSM
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 10 kΩ/47 kΩ, SOT-416(SSM)

Part	Mounting Type	Power - Max [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Package / Case	Supplier Device Package	Resistor - Base (R1)	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Resistor - Emitter Base (R2)	Current - Collector Cutoff (Max) [Max]	Frequency - Transition
Toshiba Semiconductor and Storage RN1107MFV,L3F(CT	Surface Mount	150 mW	NPN - Pre-Biased	300 mV	SOT-723	VESM	10 kOhms	100 mA	50 V	80	47 kOhms	500 nA
Toshiba Semiconductor and Storage RN1107,LF(CT	Surface Mount	100 mW	NPN - Pre-Biased	300 mV	SC-75 SOT-416	SSM	10 kOhms	100 mA	50 V	80	47 kOhms	500 nA	250 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 10 kΩ/47 kΩ, SOT-416(SSM)

Technical documentation and resources