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8 SO
Discrete Semiconductor Products

ZXMN6A25N8TA

Active
Diodes Inc

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Search across all available documentation for this part.

DocumentsDatasheetRecommended Soldering Techniques+1
8 SO
Discrete Semiconductor Products

ZXMN6A25N8TA

Active
Diodes Inc

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

DocumentsDatasheetRecommended Soldering Techniques+1

Technical Specifications

Parameters and characteristics for this part

SpecificationZXMN6A25N8TA
Current - Continuous Drain (Id) @ 25°C4.3 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20.4 nC
Input Capacitance (Ciss) (Max) @ Vds1063 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)1.56 W
Rds On (Max) @ Id, Vgs50 mOhm
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

ZXMN6A25N8 Series

60V SOT223 N-Channel enhancement mode MOSFET

PartMounting TypeDrive Voltage (Max Rds On, Min Rds On)FET TypeGate Charge (Qg) (Max) @ VgsVgs (Max)Supplier Device PackageCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Input Capacitance (Ciss) (Max) @ VdsTechnologyVgs(th) (Max) @ IdPackage / CaseOperating Temperature [Min]Operating Temperature [Max]Rds On (Max) @ Id, VgsPower Dissipation (Max)FET FeaturePower - Max [Max]ConfigurationPackage / Case [y]Package / Case [x]Input Capacitance (Ciss) (Max) @ Vds [Max]Power Dissipation (Max) [Max]Gate Charge (Qg) (Max) @ Vgs [Max]GradeQualification
TO-252-2
Diodes Inc
ZXMN6A25KTC
Surface Mount
4.5 V
10 V
N-Channel
20.4 nC
20 V
TO-252-3
7 A
60 V
1063 pF
MOSFET (Metal Oxide)
3 V
DPAK (2 Leads + Tab)
SC-63
TO-252-3
-55 °C
150 °C
50 mOhm
2.11 W
8 SO
Diodes Inc
ZXMN6A09DN8TC
Surface Mount
24.2 nC
8-SO
4.3 A
60 V
1407 pF
MOSFET (Metal Oxide)
3 V
8-SOIC
-55 °C
150 °C
40 mOhm
Logic Level Gate
1.25 W
2 N-Channel (Dual)
3.9 mm
0.154 in
Diodes Incorporated-AS431ARTR-E1 Voltage References V-Ref Adjustable 2.5V to 36V 100mA 4-Pin(3+Tab) SOT-89 T/R
Diodes Inc
ZXMN6A11ZTA
Surface Mount
4.5 V
10 V
N-Channel
5.7 nC
20 V
SOT-89-3
2.7 A
60 V
MOSFET (Metal Oxide)
1 V
TO-243AA
-55 °C
150 °C
120 mOhm
1.5 W
330 pF
SOT-223-3
Diodes Inc
ZXMN6A11GTA
Surface Mount
4.5 V
10 V
N-Channel
5.7 nC
20 V
SOT-223-3
60 V
MOSFET (Metal Oxide)
3 V
TO-261-4
TO-261AA
-55 °C
150 °C
120 mOhm
330 pF
2 W
SOT-223-3
Diodes Inc
ZXMN6A08GTA
Surface Mount
4.5 V
10 V
N-Channel
5.8 nC
20 V
SOT-223-3
3.8 A
60 V
459 pF
MOSFET (Metal Oxide)
1 V
TO-261-4
TO-261AA
-55 °C
150 °C
80 mOhm
2 W
TO-252-2
Diodes Inc
ZXMN6A09KTC
Surface Mount
4.5 V
10 V
N-Channel
29 nC
20 V
TO-252-3
7.7 A
60 V
1426 pF
MOSFET (Metal Oxide)
3 V
DPAK (2 Leads + Tab)
SC-63
TO-252-3
-55 °C
150 °C
40 mOhm
2.15 W
SOT-23-3
Diodes Inc
ZXMN6A07FTC
Surface Mount
4.5 V
10 V
N-Channel
3.2 nC
20 V
SOT-23-3
1.2 A
60 V
166 pF
MOSFET (Metal Oxide)
3 V
SC-59
SOT-23-3
TO-236-3
-55 °C
150 °C
250 mOhm
625 mW
8 SO
Diodes Inc
ZXMN6A11DN8TC
Surface Mount
8-SO
60 V
330 pF
MOSFET (Metal Oxide)
1 V
8-SOIC
-55 °C
150 °C
120 mOhm
Logic Level Gate
1.8 W
2 N-Channel (Dual)
3.9 mm
0.154 in
5.7 nC
SOT-223-3
Diodes Inc
ZXMN6A08GQTC
Surface Mount
4.5 V
10 V
N-Channel
5.8 nC
20 V
SOT-223-3
3.8 A
60 V
459 pF
MOSFET (Metal Oxide)
1 V
TO-261-4
TO-261AA
-55 °C
150 °C
80 mOhm
2 W
Automotive
AEC-Q101
8 SO
Diodes Inc
ZXMN6A25N8TA
Surface Mount
4.5 V
10 V
N-Channel
20.4 nC
20 V
8-SO
4.3 A
60 V
1063 pF
MOSFET (Metal Oxide)
3 V
8-SOIC
-55 °C
150 °C
50 mOhm
1.56 W
3.9 mm
0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 500$ 0.54
1000$ 0.50
1500$ 0.47
2500$ 0.44
3500$ 0.43
5000$ 0.41
12500$ 0.41

Description

General part information

ZXMN6A25N8 Series

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.