Specification	KSA708YBU

Current - Collector (Ic) (Max) [Max]	700 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	800 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

KSA708 Series

Part	Mounting Type	Package / Case	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature
ON Semiconductor KSA708YBU	Through Hole	TO-226-3 TO-92-3	100 nA	50 MHz	700 mA	60 V	PNP	700 mV	TO-92-3	800 mW	120	150 °C
ON Semiconductor KSA708CYBU	Through Hole	TO-226-3 TO-92-3	100 nA	50 MHz	700 mA	60 V	PNP	700 mV	TO-92-3	800 mW	120	150 °C
ON Semiconductor KSA708CYTA	Through Hole	TO-226-3 TO-92-3	100 nA	50 MHz	700 mA	60 V	PNP	700 mV	TO-92-3	800 mW	120 hFE	150 °C
ON Semiconductor KSA708YBU	Through Hole	TO-226-3 TO-92-3	100 nA	50 MHz	700 mA	60 V	PNP	700 mV	TO-92-3	800 mW	120	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 60 V 700 mA 50MHz 800 mW Through Hole TO-92-3

Technical documentation and resources