Discrete Semiconductor Products

RU1C001ZPTL

Active

MOSFET, P-CH, -20V, -0.1A, SOT-323FL

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsPrecautions When Measuring the Rear of the Package with a Thermocouple Importance of Probe Calibration When Measuring Power: Deskew +38

Discrete Semiconductor Products

RU1C001ZPTL

Active

Rohm Semiconductor

MOSFET, P-CH, -20V, -0.1A, SOT-323FL

Deep-Dive with AI

DocumentsPrecautions When Measuring the Rear of the Package with a Thermocouple Importance of Probe Calibration When Measuring Power: Deskew +38

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RU1C001ZPTL

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	15 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-85
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs	3.8 Ohm
Supplier Device Package	UMT3F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

RU1C001ZP Series

1.2V Drive Pch MOSFET

Part	Supplier Device Package	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Operating Temperature	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)
Rohm Semiconductor RU1C001ZPTL	UMT3F	150 mW	100 mA	1 V	MOSFET (Metal Oxide)	150 °C	Surface Mount	15 pF	SC-85	3.8 Ohm	1.2 V	4.5 V	P-Channel	10 V	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	3485	$ 0.23
Newark	Each (Supplied on Cut Tape)	1	$ 0.24
		10	$ 0.15
		25	$ 0.12
		50	$ 0.09
		100	$ 0.06
		250	$ 0.06
		500	$ 0.05
		1000	$ 0.05

Description

General part information

RU1C001ZP Series

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.