Discrete Semiconductor Products

SQ3457EV-T1_GE3

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MOSFET P-CHANNEL 30V 6.8A 6TSOP

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Discrete Semiconductor Products

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MOSFET P-CHANNEL 30V 6.8A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SQ3457EV-T1_GE3

Current - Continuous Drain (Id) @ 25°C	6.8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	705 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Mounting Type	Power Dissipation (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Qualification	Grade
Vishay General Semiconductor - Diodes Division SQ3457EV-T1_GE3	21 nC	2.5 V	30 V	6.8 A	6-TSOP	MOSFET (Metal Oxide)	705 pF	20 V	Surface Mount	5 W	P-Channel	-55 °C	175 ░C	4.5 V 10 V	SOT-23-6 Thin TSOT-23-6	65 mOhm	AEC-Q101	Automotive
Vishay General Semiconductor - Diodes Division SQ3457EV-T1_BE3	21 nC	2.5 V	30 V	6.8 A	6-TSOP	MOSFET (Metal Oxide)	705 pF	20 V	Surface Mount	5 W	P-Channel	-55 °C	175 ░C	4.5 V 10 V	SOT-23-6 Thin TSOT-23-6	65 mOhm	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 6.8A (Tc) 5W (Tc) Surface Mount 6-TSOP

Technical documentation and resources