Discrete Semiconductor Products

FJP5021

Obsolete

TRANS NPN 500V 5A TO220-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 500V 5A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	FJP5021

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	15
Frequency - Transition	18 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	50 W
Supplier Device Package	TO-220-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	500 V

Part	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce	Operating Temperature	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Supplier Device Package	Current - Collector (Ic) (Max)	Package / Case	Frequency - Transition
ON Semiconductor FJP5021RVTU	NPN	15	150 °C	Through Hole	500 V	10 µA	50 W	TO-220-3	5 A	TO-220-3	18 MHz
ON Semiconductor FJP5021O	NPN	20 hFE	150 °C	Through Hole	500 V	10 µA	50 W	TO-220-3	5 A	TO-220-3	18 MHz
ON Semiconductor FJP5021	NPN	15	150 °C	Through Hole	500 V	10 µA	50 W	TO-220-3	5 A	TO-220-3	18 MHz
ON Semiconductor FJP5021RTU	NPN	15	150 °C	Through Hole	500 V	10 µA	50 W	TO-220-3	5 A	TO-220-3	18 MHz
ON Semiconductor FJP5021RV	NPN	15	150 °C	Through Hole	500 V	10 µA	50 W	TO-220-3	5 A	TO-220-3	18 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 500 V 5 A 18MHz 50 W Through Hole TO-220-3

Technical documentation and resources