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8-PowerTDFN
Discrete Semiconductor Products

NVMFWS0D5N04XMT1G

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ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 40 V, 414 A, 0.52MΩ

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8-PowerTDFN
Discrete Semiconductor Products

NVMFWS0D5N04XMT1G

Active
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 40 V, 414 A, 0.52MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMFWS0D5N04XMT1G
Current - Continuous Drain (Id) @ 25°C423 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]100 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds6250 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)163 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs0.52 mOhm
Supplier Device Package8-DFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.71
10$ 3.12
100$ 2.22
500$ 1.83
Digi-Reel® 1$ 4.71
10$ 3.12
100$ 2.22
500$ 1.83
Tape & Reel (TR) 1500$ 1.74
NewarkEach (Supplied on Full Reel) 1$ 2.19
3000$ 2.10
6000$ 1.96
12000$ 1.82
18000$ 1.75
30000$ 1.72
ON SemiconductorN/A 1$ 1.51

Description

General part information

NVMFWS0D5N04XM Series

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.