Discrete Semiconductor Products

BF821,235

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BF821; BF823 - PNP HIGH VOLTAGE TRANSISTORS TO-236 3-PIN

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Discrete Semiconductor Products

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BF821; BF823 - PNP HIGH VOLTAGE TRANSISTORS TO-236 3-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	BF821,235

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50 hFE
Frequency - Transition	60 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	250 mW
Qualification	AEC-Q101
Supplier Device Package	TO-236AB
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max)	300 V

Part	Transistor Type	Current - Collector (Ic) (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Qualification	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Power - Max [Max]	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Grade	Supplier Device Package
Freescale Semiconductor - NXP BF821,235	PNP	50 mA	SC-59 SOT-23-3 TO-236-3	50 hFE	AEC-Q101	300 V	Surface Mount	0.01 µA	60 MHz	250 mW	150 °C	800 mV	Automotive	TO-236AB

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General part information

Bipolar (BJT) Transistor PNP 300 V 50 mA 60MHz 250 mW Surface Mount TO-236AB

Technical documentation and resources