Specification	SSM6K361NU,LF

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	430 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max) [Max]	1.25 W
Rds On (Max) @ Id, Vgs	69 mOhm
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

SSM6K361NU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 100 V, 3.5 A, 0.069 Ω@10V, SOT-1220(UDFN6B)

Part	Operating Temperature	FET Type	Technology	Power Dissipation (Max) [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage SSM6K361NU,LF	150 °C	N-Channel	MOSFET (Metal Oxide)	1.25 W	20 V	430 pF	6-UDFNB (2x2)	100 V	4.5 V 10 V	Surface Mount	3.5 A	3.2 nC	2.5 V	69 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 100 V, 3.5 A, 0.069 Ω@10V, SOT-1220(UDFN6B)

Technical documentation and resources