Discrete Semiconductor Products
RBQ10BGE10ATL
ActiveRohm Semiconductor
100V 10A, TO-252, CATHODE COMMON, LOW IRSCHOTTKY BARRIER DIODE
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Discrete Semiconductor Products
RBQ10BGE10ATL
ActiveRohm Semiconductor
100V 10A, TO-252, CATHODE COMMON, LOW IRSCHOTTKY BARRIER DIODE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RBQ10BGE10ATL |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 10 A |
| Current - Reverse Leakage @ Vr | 80 µA |
| Diode Configuration | 1 Pair Common Cathode |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150 ¯C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Qualification | AEC-Q101 |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-252GE |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 770 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RBQ10BGE10A Series
RBQ10BGE10A is a high reliability schottky barrier diode with low IRfor switching power supply.
Documents
Technical documentation and resources