Discrete Semiconductor Products

VSSB410S-E3/52T

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DIODE SCHOTTKY 100V 1.9A DO214AA

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Discrete Semiconductor Products

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DIODE SCHOTTKY 100V 1.9A DO214AA

Technical Specifications

Parameters and characteristics for this part

Specification	VSSB410S-E3/52T

Capacitance @ Vr, F	230 pF
Current - Average Rectified (Io)	1.9 A
Current - Reverse Leakage @ Vr	250 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SMB, DO-214AA
Speed	200 mA, 500 ns
Supplier Device Package	SMB
Supplier Device Package	DO-214AA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V

Part	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Average Rectified (Io)	Supplier Device Package	Supplier Device Package	Technology	Package / Case	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Vishay General Semiconductor - Diodes Division VSSB410S-E3/52T	250 µA	230 pF	100 V	Surface Mount	1.9 A	SMB	DO-214AA	Schottky	DO-214AA SMB	200 mA 500 ns	150 °C	-40 °C
Vishay General Semiconductor - Diodes Division VSSB410S-E3/5BT	1.5 µA	230 pF	100 V	Surface Mount	1.9 A	SMB	DO-214AA	Schottky	DO-214AA SMB	200 mA 500 ns	150 °C	-40 °C

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General part information

Diode 100 V 1.9A Surface Mount DO-214AA (SMB)

Technical documentation and resources