Discrete Semiconductor Products

RJK0703DPN-A0#T2

Obsolete

N-CHANNEL MOSFET 75 V, 70 A, 6.7 MΩ

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

N-CHANNEL MOSFET 75 V, 70 A, 6.7 MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0703DPN-A0#T2

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs [Max]	6.7 mOhm
Supplier Device Package	TO-220ABA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

N-Channel Mosfet 75 V, 70 A, 6.7 MΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Package / Case	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type
Renesas Electronics Corporation RJK0703DPN-A0#T2	10 V	6.7 mOhm	75 V	MOSFET (Metal Oxide)	20 V	56 nC	150 °C	TO-220-3	Through Hole	125 W	70 A	TO-220ABA	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources