Integrated Circuits (ICs)

AS6C1008-55PIN

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SRAM CHIP ASYNC SINGLE 3V 1M-BIT 128K X 8 55NS

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Integrated Circuits (ICs)

Active

SRAM CHIP ASYNC SINGLE 3V 1M-BIT 128K X 8 55NS

Technical Specifications

Parameters and characteristics for this part

Part	Package / Case	Package / Case	Package / Case	Supplier Device Package	Mounting Type	Access Time	Memory Organization	Operating Temperature [Min]	Operating Temperature [Max]	Memory Size	Memory Interface	Write Cycle Time - Word, Page	Technology	Voltage - Supply [Max]	Voltage - Supply [Min]	Memory Format	Memory Type	Package / Case [custom]
Alliance Memory, Inc. AS6C1008-55PCN	15.24 mm	32-DIP	0.6 in	32-PDIP	Through Hole	55 ns	128 K	0 °C	70 °C	1 Mbit	Parallel	55 ns	SRAM - Asynchronous	5.5 V	2.7 V	SRAM	Volatile
Alliance Memory, Inc. AS6C1008-55TINL		32-TFSOP	0.724 in	32-TSOP I	Surface Mount	55 ns	128 K	-40 ¯C	85 C	1 Mbit	Parallel	55 ns	SRAM - Asynchronous	5.5 V	2.7 V	SRAM	Volatile	18.4 mm
Alliance Memory, Inc. AS6C1008-55PIN	15.24 mm	32-DIP	0.6 in	32-PDIP	Through Hole	55 ns	128 K	-40 ¯C	85 C	1 Mbit	Parallel	55 ns	SRAM - Asynchronous	5.5 V	2.7 V	SRAM	Volatile
Alliance Memory, Inc. AS6C1008-55SIN		32-SOIC	0.445 in 11.3 mm	32-SOP	Surface Mount	55 ns	128 K	-40 ¯C	85 C	1 Mbit	Parallel	55 ns	SRAM - Asynchronous	5.5 V	2.7 V	SRAM	Volatile
Alliance Memory, Inc. AS6C1008-55TINLTR		32-TFSOP	0.724 in	32-TSOP I	Surface Mount	55 ns	128 K	-40 ¯C	85 C	1 Mbit	Parallel	55 ns	SRAM - Asynchronous	5.5 V	2.7 V	SRAM	Volatile	18.4 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Access time :55ns

Low power consumption:

Operating current:10 mA (TYP.)

Technical documentation and resources

No documents available