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MDD312-12N1
Discrete Semiconductor Products

MDD312-12N1

Active
LITTELFUSE

DIODE MODULE GP 1200V 310A Y1-CU

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MDD312-12N1
Discrete Semiconductor Products

MDD312-12N1

Active
LITTELFUSE

DIODE MODULE GP 1200V 310A Y1-CU

Technical Specifications

Parameters and characteristics for this part

SpecificationMDD312-12N1
Current - Average Rectified (Io) (per Diode)310 A
Current - Reverse Leakage @ Vr30 mA
Diode Configuration1 Pair Series Connection
Mounting TypeChassis Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-40 °C
Package / CaseY1-CU
Speed [Min]200 mA, 500 ns
Supplier Device PackageY1-CU
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If1.32 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 135.501m+

Description

General part information

MDD312-12N1 Series

Bipolar Module - Diode Y1-CU