Discrete Semiconductor Products

CPH6443-TL-H

NRND

MOSFET N-CH 35V 6A 6CPH

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Discrete Semiconductor Products

NRND

MOSFET N-CH 35V 6A 6CPH

Technical Specifications

Parameters and characteristics for this part

Specification	CPH6443-TL-H

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	35 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	470 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-6
Rds On (Max) @ Id, Vgs	37 mOhm
Supplier Device Package	6-CPH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Rds On (Max) @ Id, Vgs	Operating Temperature	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Supplier Device Package	FET Type
ON Semiconductor CPH6443-TL-H	37 mOhm	150 °C	MOSFET (Metal Oxide)	20 V	10 nC	6 A	SOT-23-6	Surface Mount	35 V	470 pF	4 V	10 V	6-CPH	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 35 V 6A (Ta) 1.6W (Ta) Surface Mount 6-CPH

Technical documentation and resources

No documents available