Discrete Semiconductor Products

SIR426DP-T1-GE3

Active

MOSFET N-CH 40V 30A PPAK SO-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 40V 30A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR426DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds	1160 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	4.8 W, 41.7 W
Rds On (Max) @ Id, Vgs	10.5 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs (Max)	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology
Vishay General Semiconductor - Diodes Division SIR426DP-T1-GE3	PowerPAK® SO-8	31 nC	-55 °C	150 °C	40 V	1160 pF	PowerPAK® SO-8	10.5 mOhm	2.5 V	30 A	4.8 W 41.7 W	20 V	N-Channel	Surface Mount	4.5 V 10 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 30A (Tc) 4.8W (Ta), 41.7W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources