Discrete Semiconductor Products

BUK9Y09-40B,115

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MOSFET N-CH 40V 75A LFPAK56

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Discrete Semiconductor Products

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MOSFET N-CH 40V 75A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9Y09-40B,115

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	30 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2866 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	105.3 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id [Max]	2.15 V

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Qualification	Vgs(th) (Max) @ Id [Max]	Grade	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)
Freescale Semiconductor - NXP BUK9Y09-40B,115	8 mOhm	75 A	15 V	AEC-Q101	2.15 V	Automotive	2866 pF	SC-100 SOT-669	MOSFET (Metal Oxide)	LFPAK56 Power-SO8	-55 °C	175 ░C	105.3 W	Surface Mount	10 V	5 V	30 nC	N-Channel	40 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 75A (Tc) 105.3W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources