Discrete Semiconductor Products

GD30MPS06J

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DIODE SIL CARB 650V 51A TO263-7

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Discrete Semiconductor Products

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DIODE SIL CARB 650V 51A TO263-7

Technical Specifications

Parameters and characteristics for this part

Specification	GD30MPS06J

Capacitance @ Vr, F	735 pF
Current - Average Rectified (Io)	51 A
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-263-7
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V

Part	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Supplier Device Package	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Mounting Type	Current - Average Rectified (Io)	Reverse Recovery Time (trr)
GeneSiC Semiconductor GD30MPS06J	SiC (Silicon Carbide) Schottky	650 V	735 pF	TO-263-7	500 mA	175 ░C	-55 °C	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	Surface Mount	51 A	0 ns
GeneSiC Semiconductor GD30MPS06H	SiC (Silicon Carbide) Schottky	650 V	735 pF	TO-247-2	500 mA	175 ░C	-55 °C	TO-247-2	Through Hole	49 A	0 ns

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General part information

Diode 650 V 51A Surface Mount TO-263-7

Technical documentation and resources