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R6014YNX3C16

Discrete Semiconductor Products

R6014YNX3C16

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Rohm Semiconductor

MOSFET, N-CH, 600V, 14A, TO-220AB ROHS COMPLIANT: YES

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DocumentsR6014YNX3C16 | Datasheet Impedance Characteristics of Bypass Capacitor +42

R6014YNX3C16

Discrete Semiconductor Products

R6014YNX3C16

Active

Rohm Semiconductor

MOSFET, N-CH, 600V, 14A, TO-220AB ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsR6014YNX3C16 | Datasheet Impedance Characteristics of Bypass Capacitor +42

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	R6014YNX3C16

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 12 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	890 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	132 W
Rds On (Max) @ Id, Vgs [Max]	260 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	988	$ 3.88
Newark	Each	1	$ 4.13
		10	$ 4.12
		25	$ 2.26
		50	$ 2.17
		100	$ 2.08
		250	$ 1.92
		500	$ 1.77

Description

General part information

R6014YNX3 Series

R6014YNX3 is a power MOSFET with low on - resistance, suitable for switching.

Documents

Technical documentation and resources

R6014YNX3C16 | Datasheet

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

What Is Thermal Design

Types and Features of Transistors

Application Note

TO-220AB Explanation for Marking

Package Information

Basics of Thermal Resistance and Heat Dissipation

Method for Monitoring Switching Waveform

Schematic Design & Verification

R6014YNX3 ESD Data

Characteristics Data

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Two-Resistor Model for Thermal Simulation

How to Use LTspice® Models

Schematic Design & Verification

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Notes for Temperature Measurement Using Thermocouples

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Precautions When Measuring the Rear of the Package with a Thermocouple

Report of SVHC under REACH Regulation

Environmental Data

What is a Thermal Model? (Transistor)

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

TO-220AB Inner Structure

Package Information

TO-220AB Dimension

Package Information

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Part Explanation

Application Note

Measurement Method and Usage of Thermal Resistance RthJC

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

About Flammability of Materials

Environmental Data

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

About Export Regulations

Export Information

Notes for Calculating Power Consumption:Static Operation

TO-220AB Reliability Test Result

Manufacturing Data

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Anti-Whisker formation - Transistors

Package Information

PCB Layout Thermal Design Guide

List of Transistor Package Thermal Resistance

TO-220AB Packing Information

Package Information

Compliance of the RoHS directive

Environmental Data

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Judgment Criteria of Thermal Evaluation

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Condition of Soldering / Land Pattern Reference

Package Information

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Moisture Sensitivity Level - Transistors

Package Information

R6014YNX3 Series

Nch 600V 14A, TO-220AB, Power MOSFET

Part	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)
Rohm Semiconductor R6014YNX3C16	600 V	N-Channel	TO-220-3	260 mOhm	10 V 12 V	Through Hole	150 °C	6 V	20 nC	MOSFET (Metal Oxide)	890 pF	14 A	TO-220AB	132 W	30 V