Discrete Semiconductor Products

2N2903A

Obsolete

TRANS 2NPN 50MA 30V TO78-6

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS 2NPN 50MA 30V TO78-6

Technical Specifications

Parameters and characteristics for this part

Specification	2N2903A

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	125
Frequency - Transition	60 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-78-6 Metal Can
Power - Max [Max]	1.2 W
Supplier Device Package	TO-78-6
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Package / Case	Supplier Device Package	Power - Max [Max]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic
Central Semiconductor Corp 2N2903A	TO-78-6 Metal Can	TO-78-6	1.2 W	2 NPN (Dual)	50 mA	200 °C	-65 °C	Through Hole	30 V	60 MHz	125	10 nA	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 50mA 60MHz 1.2W Through Hole TO-78-6

Technical documentation and resources