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W-DFN2020-3 (Type A)
Discrete Semiconductor Products

FMMT411FDBW-7

Active
Diodes Inc

POWER BIPOLAR TRANSISTOR, 5A I(C), 15V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 3 PIN, W-DFN2020-3, 3 PIN

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W-DFN2020-3 (Type A)
Discrete Semiconductor Products

FMMT411FDBW-7

Active
Diodes Inc

POWER BIPOLAR TRANSISTOR, 5A I(C), 15V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 3 PIN, W-DFN2020-3, 3 PIN

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFMMT411FDBW-7
Current - Collector (Ic) (Max)5 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition110 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-UDFN Exposed Pad
Power - Max [Max]1.7 W
Supplier Device PackageW-DFN2020-3 (Type A)
Transistor TypeNPN - Avalanche Mode
Voltage - Collector Emitter Breakdown (Max)15 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 1.31

Description

General part information

FMMT411FDBW Series

The FMMT411FDBW is a silicon planar bipolar transistor designed for operating in avalanche mode. Tight process control and low inductance packaging combine to produce high on current pulses with fast edges.

Documents

Technical documentation and resources