Discrete Semiconductor Products

NP15P06SLG-E1-AY

Active

MOSFET, P -CH, 60V, 15A, TO-252 ROHS COMPLIANT: YES

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET, P -CH, 60V, 15A, TO-252 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	NP15P06SLG-E1-AY

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	1100 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	1.2 W, 30 W
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	MP-3ZK
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Supplier Device Package	Supplier Device Package	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation NP15P06SLG-E1-AY	1100 pF	15 A	2.5 V	23 nC	20 V	MP-3ZK	TO-252	175 °C	4.5 V 10 V	Surface Mount	P-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	70 mOhm	1.2 W 30 W	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Super low on-state resistanceRDS(on)1 = 70 mO MAX. (VGS = -10 V, ID = -7.5 A)RDS(on)2 = 95 mO MAX. (VGS = -4.5 V, ID = -7.5 A)

RDS(on)1 = 70 mO MAX. (VGS = -10 V, ID = -7.5 A)

RDS(on)2 = 95 mO MAX. (VGS = -4.5 V, ID = -7.5 A)

Technical documentation and resources