Discrete Semiconductor Products

SQJ454EP-T1_GE3

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MOSFET N-CH 200V 13A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 200V 13A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ454EP-T1_GE3

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	85 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	68 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	145 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Grade	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SQJ454EP-T1_GE3	Surface Mount	Automotive	PowerPAK® SO-8	4.5 V 10 V	2.5 V	200 V	PowerPAK® SO-8	2600 pF	MOSFET (Metal Oxide)	20 V	145 mOhm	85 nC	N-Channel	68 W	-55 °C	175 ░C	AEC-Q101	13 A

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General part information

N-Channel 200 V 13A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources