Discrete Semiconductor Products

PJP6NA90_T0_00001

Obsolete

MOSFETS 900V N-CHANNEL MOSFET

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Discrete Semiconductor Products

Obsolete

MOSFETS 900V N-CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJP6NA90_T0_00001

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23.6 nC
Input Capacitance (Ciss) (Max) @ Vds	915 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	167 W
Rds On (Max) @ Id, Vgs	2.3 Ohm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Power Dissipation (Max)
Panjit International Inc. PJP6NA90_T0_00001	Through Hole	2.3 Ohm	MOSFET (Metal Oxide)	TO-220AB	N-Channel	150 °C	-55 °C	915 pF	TO-220-3	4 V	900 V	6 A	10 V	23.6 nC	30 V	167 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 900 V 6A (Ta) 167W (Tc) Through Hole TO-220AB

Technical documentation and resources