Discrete Semiconductor Products

FJBE2150DTU

Obsolete

TRANS NPN 800V 2A D2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 800V 2A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	FJBE2150DTU

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Frequency - Transition	5 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]	110 W
Supplier Device Package	TO-263 (D2PAK)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	800 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Package / Case	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Mounting Type
ON Semiconductor FJBE2150DTU	800 V	NPN	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	250 mV	20	125 ¯C	-55 °C	TO-263 (D2PAK)	110 W	2 A	100 µA	5 MHz	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 800 V 2 A 5MHz 110 W Surface Mount TO-263 (D2PAK)

Technical documentation and resources

No documents available