Specification	NVBG080N120SC1

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1154 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max) [Max]	179 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	D2PAK-7
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-15 V
Vgs(th) (Max) @ Id	4.3 V

NVBG080N120SC1 Series

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mΩ , 1200 V, M1, D2PAK−7L

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Vgs (Max) [Min]	Vgs (Max) [Max]	Qualification	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Mounting Type	Grade
ON Semiconductor NVBG080N120SC1	1200 V	1154 pF	N-Channel	-15 V	25 V	AEC-Q101	110 mOhm	179 W	-55 °C	175 ░C	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	30 A	56 nC	D2PAK-7	4.3 V	Surface Mount	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 12.68
		10	$ 10.20
		25	$ 10.12
		50	$ 10.04
		100	$ 8.22
		250	$ 8.13
		500	$ 8.09
Digikey	Cut Tape (CT)	1	$ 16.45
		10	$ 11.64
		100	$ 8.92
	Digi-Reel®	1	$ 16.45
		10	$ 11.64
		100	$ 8.92
	Tape & Reel (TR)	800	$ 8.72
ON Semiconductor	N/A	1	$ 8.02

Description

General part information

NVBG080N120SC1 Series

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.