Specification	DMT6010LFG-7

Current - Continuous Drain (Id) @ 25°C	13 A, 30 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	41.3 nC
Input Capacitance (Ciss) (Max) @ Vds	2090 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2.2 W, 41 W
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	POWERDI3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

DMT6010LPS Series

60V N-Channel Enhancement Mode MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Power Dissipation (Max)	Vgs (Max)	FET Type	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
Diodes Inc DMT6010LPS-13	4.5 V 10 V	2090 pF	41.3 nC	3 V	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	8 mOhm	PowerDI5060-8	113 W	2.2 W	20 V	N-Channel	8-PowerTDFN	60 V	13.5 A 80 A
Diodes Inc DMT6010LFG-13	4.5 V 10 V	2090 pF	41.3 nC	2 V	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	7.5 mOhm	POWERDI3333-8			20 V	N-Channel	8-PowerVDFN	60 V	13 A 30 A	2.2 W 41 W
Diodes Inc DMT6010LFG-7	4.5 V 10 V	2090 pF	41.3 nC	2 V	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	7.5 mOhm	POWERDI3333-8			20 V	N-Channel	8-PowerVDFN	60 V	13 A 30 A	2.2 W 41 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.85
		10	$ 0.73
		100	$ 0.51
		500	$ 0.42
		1000	$ 0.36
	Digi-Reel®	1	$ 0.85
		10	$ 0.73
		100	$ 0.51
		500	$ 0.42
		1000	$ 0.36
	Tape & Reel (TR)	2000	$ 0.32
		6000	$ 0.30
		10000	$ 0.29

Description

General part information

DMT6010LPS Series

This new generation n-channel enhancement mode MOSFET is designed to minimize RDS(ON)yet maintain superior switching performance. This device is ideal for use in notebook battery power managements and Load switches.