Specification	KSC2334Y

Current - Collector (Ic) (Max) [Max]	7 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	1.5 W
Supplier Device Package	TO-220-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

KSC2334 Series

NPN Epitaxial Silicon Transistor

Part	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Power - Max [Max]	Supplier Device Package	Mounting Type	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor KSC2334Y	10 µA	600 mV	150 °C	120	7 A	NPN	1.5 W	TO-220-3	Through Hole	TO-220-3	100 V
ON Semiconductor KSC2334RTU	10 µA	600 mV	150 °C	40	7 A	NPN	1.5 W	TO-220-3	Through Hole	TO-220-3	100 V
ON Semiconductor KSC2334R	10 µA	600 mV	150 °C	40	7 A	NPN	1.5 W	TO-220-3	Through Hole	TO-220-3	100 V
ON Semiconductor KSC2334YTU	10 µA	600 mV	150 °C	120	7 A	NPN	1.5 W	TO-220-3	Through Hole	TO-220-3	100 V
ON Semiconductor KSC2334Y	10 µA	600 mV	150 °C	120	7 A	NPN	1.5 W	TO-220-3	Through Hole	TO-220-3	100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources